Designed for powerful and highly efficient inverter systems for railways, electrical power systems and more
TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of two new S1 Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV. Volt, for large appliances. Industrial equipment such as rail cars and DC power transmitters as of December 26. Thanks to the insulated gate bipolar transistor (IGBT) and insulation structures, the new modules provide excellent reliability, low power loss and thermal resistance, which is expected to increase the reliability and efficiency of transformers in large industrial equipment.
Mitsubishi Electric's (OTC:) 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their excellent performance and high reliability, have been widely adopted for inverters in power systems.
The new S1 Series modules incorporate Mitsubishi Electric's proprietary cathode field (RFC) diode, which increases the reverse recovery safe operating area (RRSOA) by 2.2 times compared to previous models to improve inverter reliability. Additionally, the use of an IGBT element with a carrier-stored trench gate bipolar transistor (CSTBT) architecture helps reduce both power loss and thermal resistance for more efficient converters. Furthermore, Mitsubishi Electric's proprietary insulation structure increases insulation voltage resistance to 6.0 kVp, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.
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Customer inquiries
Semiconductor and Devices Marketing Division A and Division B.
Mitsubishi Electric Company
www.MitsubishiElectric.com/semiconductors/
Media inquiries
Takeyoshi Komatsu (OTC:)
Public Relations Department
Mitsubishi Electric Company
Tel: +81-3-3218-2332
prd.gnews@nk.MitsubishiElectric.co.jp
www.MitsubishiElectric.com/news/
Source: Mitsubishi Electric Company
